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GaN Power Electronics
AlN-on-Si templates serve as high-quality buffer layers for GaN-on-Si power devices. They enable low-defect GaN HEMTs for fast chargers, EV powertrains, and data center power supplies.
AlN Template
AlN on Silicon Template
A highly versatile AlN-on-Si template platform. The high-quality AlN layer supports a wide range of applications including GaN power/RF epitaxy, piezoelectric MEMS (SAW/BAW filters), and advanced photonic devices, enabling seamless integration with mature silicon manufacturing processes.
- Substrate — Silicon (100) or (111)
- Size — 4", 6”, 8", customizable
- Epi Thickness — 50nm~1μm
- Surface finished — epi-ready
- XRD FWHM (0002) — typical ≤1050 arcsec
- Custom specification — acceptable
- Package — Single wafer cassette, vacuum sealed
Detailed Specifications
Specifications by wafer type.
Select a wafer type to view detailed specs
* Typical specifications; actual values may vary according to wafer size, substrate and growth conditions.
Applications
Where this wafer delivers value
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RF & 5G/6G Front-Ends
Providing excellent thermal management and high-resistivity interfaces, these templates support GaN RF and high-frequency devices for 5G/6G base stations, radar systems, and satellite communications.
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Piezoelectric MEMS & Sensors
The high-quality AlN layer offers strong piezoelectric properties, making these templates ideal for fabricating SAW/BAW RF filters, acoustic sensors, and PMUTs on silicon substrates.
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Advanced Heterogeneous Integration
Serving as the crystalline bridge between III-N wide-bandgap epitaxy and mature Si CMOS technology — the foundation for monolithic GaN/Si co-integration. Ideal for CMOS-compatible integrated photonics, quantum photonics (single-photon sources & detectors), and next-generation GaN power/RF electronics.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
Typical AlN film thickness ranges from 50 nm to 1 µm. The thickness can be customized to perfectly match your specific device architecture, including GaN HEMTs, piezoelectric MEMS, or photonic structures.
Yes. We are R&D friendly for prototyping. We support rapid turnaround for small-batch research and pilot projects, with seamless scaling to volume production.
To provide an accurate quote, please specify: Wafer size (e.g., 6" or 8"), Si orientation ((111) or (100)), AlN thickness, target application (e.g., RF, Power, MEMS), and order quantity.
Our AlN on Si templates feature high crystal quality with typical XRD FWHM (0002) ≤ 1050 arcsec and a surface roughness of Ra ≤ 2 nm. All wafers are delivered Epi-ready to ensure high-quality subsequent epitaxial growth.
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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