III-V Compound Wafers

GaAs Wafer

Gallium Arsenide (GaAs) combines a direct bandgap with high electron mobility, making it a widely used substrate material for MMICs, HEMTs, HBTs, VCSELs, laser diodes, LEDs and high-efficiency solar cells. GaAs wafers are available in multiple diameters, crystal orientations and surface finishes.

Size — 2", 3", 4" and 6"
Orientation — (100), (111)A and (111)B
Conduction type — N-type (Si doped), P-type (Zn doped) and Semi-insulating (C doped)
Surface finished — SSP or DSP, epi-ready
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	2”(50.8mm) GaAs Substrate
Conduction Type	N-Type
Dopant	Si
Orientation	(100), (111)A, (111)B
Resistivity	(1.5–9) × 10⁻³ Ω·cm
Mobility	1500–3000 cm²/V·s
EPD	≤5000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	3”(76.2mm) GaAs Substrate
Conduction Type	N-Type
Dopant	Si
Orientation	(100), (111)A, (111)B
Resistivity	(1.5–9) × 10⁻³ Ω·cm
Mobility	1500–3000 cm²/V·s
EPD	≤5000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	4”(100mm) GaAs Substrate
Conduction Type	N-Type
Dopant	Si
Orientation	(100), (111)A, (111)B
Resistivity	(1.5–9) × 10⁻³ Ω·cm
Mobility	1500–3000 cm²/V·s
EPD	≤5000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	6”(150mm) GaAs Substrate
Conduction Type	N-Type
Dopant	Si
Orientation	(100), (111)A, (111)B
Resistivity	(1.5–9) × 10⁻³ Ω·cm
Mobility	1500–3000 cm²/V·s
EPD	≤5000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

RF & Microwave

Semi-insulating GaAs wafers provide electrical isolation and low parasitic effects for high-frequency device fabrication. Typical devices: MMICs HEMTs pHEMTs HBTs Low-noise amplifiers RF power amplifiers Typical applications: 5G / 6G communications Wireless infrastructure Satellite communications Radar RF instrumentation

VCSELs & Laser Diodes

Conductive GaAs wafers are widely used as substrates for III-V optoelectronic structures based on AlGaAs, InGaAs and related materials. Typical devices: VCSELs Laser diodes Infrared LEDs Optical sensing devices

Photovoltaics

GaAs offers high optoelectronic conversion performance and is used in high-efficiency photovoltaic devices. Typical applications: Space solar cells High-efficiency solar cells Concentrated photovoltaics

LED & Optoelectronics

GaAs substrates support the growth of III-V epitaxial structures for red, infrared and other optoelectronic devices.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What is the difference between conductive and semi-insulating GaAs?

Conductive GaAs is commonly used where electrical current injection is required, such as optoelectronic devices. Semi-insulating GaAs provides high electrical resistivity and is widely used for RF and microwave devices.

Which GaAs wafer is suitable for RF applications?

C-doped semi-insulating GaAs is commonly selected for MMICs, HEMTs, pHEMTs, HBTs and other high-frequency devices.

Which GaAs wafer is suitable for VCSELs?

Conductive GaAs wafers are commonly used as substrates for VCSEL and laser diode epitaxy, with the exact conductivity type depending on the device structure.

Technical Inquiry

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