GaN Wafers

GaN HEMT Epitaxy

GaN HEMT epitaxial wafers are precision-grown AlGaN/GaN heterostructures designed for high-frequency and high-power switching devices.

Substrate platform — Sapphire, Si, SiC
Size — 2"–8"
Feature — High-density two-dimensional electron gas (2DEG) channel

Share this product:

Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	RF HEMT Epi Structure	Power HEMT Epi Structure
Passivation	SiN	—
Cap Layer	GaN	GaN
Barrier	AlGaN	AlGaN / (In)AlN
Interlayer	AlN	AlN
Channel	GaN	GaN
Buffer	GaN	GaN
Nucleation	Nucleation layer	Nucleation layer
Substrate	Sapphire	Sapphire
Size	2”, 4”, 6”	2”, 4”, 6”

Parameter	Power D-mode / RF HEMT Epi Structure	Power E-mode HEMT Epi Structure
Passivation	SiN	/
Cap Layer	GaN	p-GaN/GaN
Barrier	AlGaN	AlGaN
Channel	GaN	GaN
Buffer	AlGaN	AlGaN
Transition Layer	AlN	/
Substrate	Si	Si
Substrate Parameters
Wafer Diameter	2”, 4”, 6”, 8”	2”, 4”, 6”, 8”
Substrate Thickness	675μm / 1000μm / 1300μm / 1500μm*	675μm / 1000μm / 1300μm / 1500μm*

Parameter	RF HEMT Epi-Structure
Passivation	SiN
Cap Layer	GaN
Barrier	AlGaN
Interlayer	AlN
Channel	GaN
Buffer	GaN
Transition Layer	AlN
Substrate	4H-SiC
Size	2”, 4”, 6”

* Customized epi structures are available according to device requirements.

Applications

Where this wafer delivers value

RF power amplifiers

GaN-on-SiC or GaN-on-Si HEMT epiwafers for 5G/6G infrastructure, satellite communication, radar systems

Fast-charging adapters

GaN-on-Si HEMT epiwafers for smartphones, laptops, consumer electronics

Power conversion

GaN-on-Si or GaN-on-sapphire HEMT epiwafers for server PSUs, industrial motor drives, renewable energy inverters (solar, wind)

Electric vehicles

GaN-on-Si HEMT epiwafers for onboard chargers (OBC), DC-DC converters

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What is the difference between GaN-on-Si, GaN-on-SiC and GaN-on-Sapphire?

The three platforms offer different combinations of thermal performance, wafer size, cost and device application: GaN-on-Si: attractive for scalable power electronics and cost-sensitive applications. GaN-on-SiC: excellent thermal performance and commonly selected for high-power RF applications. GaN-on-Sapphire: economical platform for GaN device development and selected power/RF applications.

Can the AlGaN barrier layer be customized?

Yes. The AlGaN barrier composition and thickness can be customized according to the required 2DEG characteristics and device design. AlGaN/(In)AlN barrier structures can also be considered for specific applications.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.