III-V Compound Wafers

GaSb Wafer

With a lattice constant of approximately 6.096 Å, GaSb (Gallium Antimonide) provides excellent lattice compatibility with antimonide-based materials such as InAs, AlSb and InAsSb, making it an important substrate platform for Type-II superlattice (T2SL) infrared detectors, mid-IR lasers and advanced optoelectronic devices. GaSb wafers are available in multiple diameters, crystal orientations and surface finishes for epitaxial growth and device fabrication.

Size — 2", 3" and 4"
Orientation — (100), (111)
Conduction type — N-type (Te-doped) and P-type (Zn-doped)
Surface finish — SSP or DSP, epi-ready
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	2”(50.8mm) GaSb Substrate
Conduction type	N-Type
Dopant	Te
Orientation	(100) / (111)
Thickness	500±25um
TTV	<10um
Bow	<10um
Warp	<12um
Mobility	2,000–3,500 cm²/V·s
Carrier Concentration	(1–20) × 10¹⁷ cm⁻³
EPD	≤2,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	3”(76.2mm) GaSb Substrate
Conduction type	N-Type
Dopant	Te
Orientation	(100) / (111)
Thickness	600±25um
TTV	<12um
Bow	<12um
Warp	<15um
Mobility	2,000–3,500 cm²/V·s
Carrier Concentration	(1–20) × 10¹⁷ cm⁻³
EPD	≤2,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	4”(100mm) GaSb Substrate
Conduction type	N-Type
Dopant	Te
Orientation	(100) / (111)
Thickness	800±25um
TTV	<15um
Bow	<15um
Warp	<20um
Mobility	2,000–3,500 cm²/V·s
Carrier Concentration	(1–20) × 10¹⁷ cm⁻³
EPD	≤2,000 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Type-II Superlattice Infrared Detectors

GaSb provides a suitable lattice platform for InAs/GaSb and related Type-II superlattice structures, enabling bandgap engineering across a broad infrared wavelength range. Typical devices: Type-II superlattice (T2SL) detectors MWIR infrared detectors LWIR / VLWIR detectors Infrared focal plane arrays (FPAs) Typical applications: Thermal imaging Infrared sensing Gas detection Spectroscopy Defense and aerospace imaging Recommended substrate: N-type or P-type GaSb according to the epitaxial and device structure.

Mid-Infrared Lasers & Photonics

GaSb is an important substrate material for antimonide-based mid-infrared laser and optoelectronic structures. Typical devices: Mid-IR laser diodes IR LEDs Antimonide-based photonic devices Quantum well and superlattice structures Typical applications: Gas sensing Environmental monitoring Medical diagnostics Molecular spectroscopy Recommended substrate: N-type GaSb is commonly selected where an electrically conductive substrate is required for device fabrication.

Thermophotovoltaic Applications

GaSb's relatively narrow bandgap makes it suitable for thermophotovoltaic (TPV) cells designed to convert thermal radiation into electrical energy. Typical applications: Waste heat recovery Industrial energy harvesting Thermal-to-electric energy conversion Radioisotope power systems Recommended substrate: P-type GaSb for selected photovoltaic device structures.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Why is GaSb used for Type-II superlattice detectors?

GaSb provides a suitable lattice platform for InAs/GaSb and related Type-II superlattice structures, enabling infrared bandgap engineering through heterostructure design.

Which GaSb wafer is suitable for T2SL infrared detectors?

Both N-type and P-type GaSb can be used. The appropriate conductivity type depends on the specific T2SL epitaxial and device architecture.

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