III-V Semiconductor Epitaxial Wafers

III-V Semiconductor Epitaxial Wafer

Precision MOCVD/MBE-grown heterostructures on InP, GaSb, and GaAs substrates. Engineered for high-performance HEMTs, pHEMTs, HBTs, laser diodes, VCSELs, and IR detectors. Supporting custom epi structures from R&D to volume production.

Substrate — InP, GaSb, GaAs
Growth Method — MOCVD, MBE
Epi type — HEMT, pHEMT, HBT, LD, VCSEL, Photodetector, T2SL
Customization — Layer thickness, doping, and multi-layer stacks
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Material System	Typical Structure	Key Properties	Primary Applications
InGaAs/InP	PIN/APD Detector HEMT Channel	High electron mobility Absorption at 1.3–1.55µm	High-speed optical receivers mmWave HEMTs
InGaAsP/InP	Multiple Quantum Well Laser Structures	Direct bandgap Tunable wavelength	DFB Lasers, EMLs Electro-absorption modulators (EAM) Optical amplifiers
InAlAs/InGaAs/InP	2DEG Heterostructure	Better gain Lower noise Higher power efficiency	Ultra-high-speed HEMTs and HBTs
LT-InGaAs (Low Temperature InGaAs)	Low-Temperature Grown InGaAs Layer	Ultra-high resistivity Ultra-fast carrier lifetime	Terahertz photoconductive antennas Ultra-fast photodetectors

Export Control Notice

Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment. Contact our compliance team for details.

Material System	Typical Structure	Key Properties	Primary Applications
InAs/GaSb (Type-II superlattice)	T2SL IR Detector Structures	Broad spectral coverage (extendable >14µm)	High-performance MWIR & LWIR Imaging
InGaAsSb/GaSb AlGaAsSb/GaSb	Quantum Well Laser Structures	Direct bandgap Mid-IR emission	Mid-IR Lasers for gas sensing
GaSb-based thermophotovoltaic (TPV) structures	PIN structure	High-efficiency energy conversion	TPV cells

Export Control Notice

Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment. Contact our compliance team for details.

Material System	Typical Structure	Key Properties	Primary Applications
AlGaAs/GaAs	Quantum Wells, Heterostructures	High electron mobility Direct bandgap	5G/6G RF HEMTs Near-IR Laser Diodes (LDs)
InGaP/GaAs	HBT Structures	High breakdown voltage High efficiency	RF Power Amplifiers (HBTs)
InGaAs/GaAs (Strain Layer)	pHEMT Structures	Very high electron mobility & velocity	mmWave LNAs High-speed switches
AlGaInP/GaAs	Multiple Quantum Well Structures	Direct bandgap Red-Yellow spectrum	High-brightness Red, Yellow, Orange LEDs
LT-GaAs (Low Temperature GaAs)	Low-Temperature Grown GaAs (LTG-GaAs) Layer	Ultra-high resistivity Ultra-fast carrier lifetime	Terahertz photoconductive antennas Ultra-fast photodetectors

Export Control Notice

Export of this product is regulated by the Ministry of Commerce of the PRC (MOFCOM). An export license must be obtained prior to shipment. Contact our compliance team for details.

Applications

Where this wafer delivers value

InP-Based Epitaxial Wafers

InP epitaxial wafers are engineered for high-speed optical communications and RF devices, supporting 1.3–1.55 µm optical communications, DFB/EML lasers, PIN/APD photodetectors, and mmWave HEMT/HBT applications.

GaSb-Based Epi Wafers

GaSb epi wafers are tailored for mid-wave and long-wave infrared (MWIR/LWIR) detection and imaging. Featuring Type-II superlattice (T2SL) structures, they enable high-performance T2SL detectors and gas sensing systems.

GaAs-Based Epitaxial Wafers

GaAs epitaxial wafers serve 5G/6G RF front-ends, near-infrared lasers, and high-brightness LEDs. Typical applications include 5G/6G pHEMT/HBT devices, VCSEL/near-IR laser diodes, red/yellow LEDs, and photoconductive switches.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Can you develop an epi structure based on our device requirements?

Yes, we support custom epitaxial growth. To initiate the process, customers must provide a complete epi-stack design (including layer sequence, composition, thickness, and doping profiles). Our engineering team will review the structure to assess growth feasibility and process compatibility before proceeding.

What information is needed for an epiwafer quotation?

To provide an accurate quote, please specify: Material system (e.g., InP, GaAs), wafer diameter, crystal orientation, layer structure, layer thickness, doping requirements, quantity, and target device application.

How do you ensure the crystal quality and consistency of your III-V epiwafers?

We implement strict in-process quality control to guarantee wafer consistency. Every shipment includes full traceability and a Certificate of Analysis (CoA)

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.