III-V Compound Wafers

InSb Wafer

With an ultra-narrow direct bandgap of approximately 0.17 eV at 300 K and exceptionally high electron mobility, InSb is particularly suited for mid-wavelength infrared (MWIR) detection in the 3–5 μm range. PWG supplies N-type and P-type Indium Antimonide (InSb) wafers for high-sensitivity infrared detection, magnetic sensing and cryogenic electronics.

Size — 2" and 3"
Orientation — (100), (111)
Conduction Type — N-type (Te-doped) and P-type(Ge-doped)
Surface finish — SSP or DSP, epi-ready
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	2”(50.8mm) InSb Substrate
Conduction type	N-Type
Dopant	Te
Orientation	(100) / (111)
Thickness	625±25um
Carrier Concentration	2.5 × 10¹⁵–1 × 10¹⁸ cm⁻³
EPD	≤100 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	3”(76.2mm) InSb Substrate
Conduction type	N-Type
Dopant	Te
Orientation	(100) / (111)
Thickness	800/900±25um
Carrier Concentration	2.5 × 10¹⁵–1 × 10¹⁸ cm⁻³
EPD	≤100 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Parameter	4”(100mm) InSb Substrate
Conduction type	N-Type
Dopant	Te
Orientation	(100) / (111)
Thickness	1000±25um
Carrier Concentration	2.5 × 10¹⁵–1 × 10¹⁸ cm⁻³
EPD	≤100 cm⁻²
Surface Finish	SSP / DSP, epi-ready
Flat	SEMI standard
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

MWIR Infrared Detection

InSb is particularly well suited for mid-wavelength infrared detection around 3–5 μm, making it an established material platform for high-sensitivity cooled infrared detectors. Typical devices: MWIR photodetectors Infrared focal plane arrays (FPAs) Infrared imaging detectors Gas detection sensors Spectroscopy detectors Typical applications: Thermal imaging Infrared surveillance Gas analysis Industrial monitoring Scientific instrumentation Recommended substrate: N-type or P-type InSb according to the detector structure.

Magnetic Sensors

The high electron mobility and strong magnetoresistive response of InSb make it suitable for sensitive magnetic sensing devices. Typical devices: Hall sensors Magnetoresistive sensors Magnetic field detectors Recommended substrate: N-type InSb is commonly preferred for high-mobility Hall and magnetic sensing applications.

Cryogenic & High-Mobility Electronics

InSb's high electron mobility and narrow bandgap make it useful for advanced electronic research, particularly under low-temperature operating conditions. Typical applications: Cryogenic electronics High-mobility transistor research Low-temperature semiconductor devices Advanced III-V electronic research

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What wavelength range is InSb used for?

InSb is widely used for MWIR detection in the approximately 3–5 μm atmospheric window, particularly in cooled infrared detector systems.

Which InSb wafer is recommended for MWIR detectors?

Both N-type and P-type InSb can be used depending on the detector architecture and epitaxial or device requirements.

Which InSb wafer is suitable for Hall sensors?

N-type InSb is commonly selected for Hall sensors and other high-mobility magnetic sensing devices.

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