SiC Wafers

SiC Substrate

SiC substrate wafers for power, RF, optoelectronic and advanced semiconductor applications. Available in 4H-SiC, 6H-SiC and 3C-SiC, with N-type, P-type and semi-insulating options, multiple wafer sizes, doping levels and surface finishes.

Polytypes — 4H-SiC · 6H-SiC · 3C-SiC
Conductivity — N-type · P-type · Semi-insulating
Doping Options — N-doped · Al-doped · V-doped
Sizes — 2″ · 3″ · 4″ · 6″· 8″· 12″
Surface — SSP · DSP ·Epi-ready
Packaging — Single wafer cassette, vacuum sealed

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Detailed Specifications

Published specifications by wafer diameter.

Select a diameter to review the corresponding published specification set.

Parameter	8”/200mm 4H-SiC Substrate
Polytype	4H
Diameter	200±0.2mm
Thickness	350±25µm, 500±25µm
Orientation	4° toward (11-20) ±0.5°
Conduction Type	N type
Dopant	Nitrogen (N)
Resistivity	0.015~0.03Ω·cm
MPD	≤2ea/cm² (A grade); ≤10ea/cm² (B grade); ≤50ea/cm² (C grade)
TTV	≤10µm(A grade); ≤15µm (B grade); ≤20µm (C grade)
Bow	-25~25µm(A grade); -45~45µm(B grade); -65~65µm(C grade)
Warp	≤35µm(A grade); ≤50µm (B grade); ≤70µm (C grade)
Surface Roughness	Si-face CMP Ra ≤0.2nm C-face optical polish <5nm
Surface Finish	SSP / DSP, epi-ready
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	6”/150mm 4H-SiC Substrate
Polytype	4H
Diameter	150 ± 0.5mm
Thickness	350±25µm, 500±25µm
Orientation	4° toward (11-20) ±0.5°
Conduction Type	N type
Dopant	Nitrogen (N)
Resistivity	0.015 – 0.028Ω·cm
MPD	≤0.5cm⁻²
TTV	<15µm
Bow	<40µm
Warp	<60µm
Surface Roughness	Si-face CMP Ra ≤0.2nm C-face optical polish <1nm
Surface Finish	SSP / DSP, epi-ready
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	4″/100mm SiC Substrate
Polytype	4H
Thickness	330 – 650µm
Orientation	4° toward (11-20) ±0.5°
Conduction Type	N type
Dopant	Nitrogen (N)
Resistivity	0.015–0.028Ω·cm
MPD (A Grade)	≤ 0.5cm⁻²
TTV	< 10µm
Bow	< 25µm
Warp	< 45µm
Surface Roughness	Si-face CMP Ra ≤0.2nm C-face optical polish <1nm
Surface Finish	SSP / DSP, epi-ready
Packaging	Single or multi‑wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Power Electronics

SiC substrates serve as the ideal platform for epitaxial growth, enabling the fabrication of high-performance Schottky diodes (SBDs), MOSFETs, and IGBTs. These devices are widely adopted in new energy vehicles, rail transit, smart grids, and industrial motor drives, offering superior efficiency and reliability.

RF & Microwave Devices

Semi-insulating 4H-SiC wafers are the preferred substrate for GaN high-electron-mobility transistors (HEMTs), providing excellent high-frequency performance for 5G base stations, radar systems, and satellite communications.

Emerging AR/MR Applications

With its high refractive index and excellent optical properties, SiC is emerging as a promising material for photonic integrated circuits and optical waveguides. This makes 4H-SiC wafers an ideal substrate for next-generation AR glasses and mixed reality displays, enabling compact, high-efficiency waveguide-based optical systems.

Extreme-Environment Electronics

Thanks to their high-temperature resistance and radiation hardness, SiC-based devices are ideally suited for harsh-environment applications, including aerospace systems, deep-well drilling sensors, and other critical electronic systems.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What types of SiC substrate wafers does PWG offer?

Power Wafertech Group supplies 4H-SiC, 6H-SiC, and 3C-SiC substrate wafers. Depending on the application, we offer N-type, P-type, and semi-insulating SiC substrates with different doping levels and electrical properties.

What is the difference between N-type, P-type, and semi-insulating SiC wafers?

N-type SiC: Typically nitrogen-doped and used extensively for power device substrates and epitaxial growth. P-type SiC: Typically aluminum-doped and suitable for PN junctions, bipolar devices, and specialized device structures. Semi-insulating SiC: Typically vanadium-doped and designed for high-frequency applications, particularly as a substrate for GaN HEMT epitaxy.

What MPD level can your SiC substrates achieve?

Our SiC substrates are available with different micropipe density (MPD) specifications depending on wafer size and grade. For selected 4H-SiC substrates, MPD can be as low as ≤0.1 cm⁻², while 6" and 8" products are available with specifications tailored to grade and application.

Do you provide SiC wafer processing services?

Yes. In addition to bare substrates, we can support dicing, grinding, thinning, CMP polishing, backside processing/metallization, crystal bonding, and ion implantation according to project requirements.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

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