Silicon Substrate Wafer | Power Wafertech Group

Silicon Substrate

Single-crystal silicon wafers engineered for semiconductor device fabrication, MEMS, and epitaxial growth. Available in prime-grade and test-grade with excellent flatness, low defect density, and customizable surface finishes to meet your exact process requirements.

Size — 4”, 6”, 8”, 12”
Orientation — (100), (110), (111), (211), customizable
Growth method — CZ (Czochralski), FZ (Float Zone)
Resistivity — 0.0005 Ω·cm to >10,000 Ω·cm
Surface finished — SSP, DSP, lapped, etched, as-cut
Grade — Prime-grade, test-grade
Packaging — Single or multi-wafer cassette, vacuum sealed

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Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Parameter	6” (150 mm) Silicon Wafer
Crystal Growth	CZ / FZ
Crystal Orientation	(100), (110), (111)
Doping Type	N-type (P, As, Sb), P-type (B)
Grade	Prime, test, dummy, research grade
Resistivity	0.0005–10,000+ Ω·cm (depending on growth method and doping)
Thickness	675 ± 25μm
TTV	≤5μm
Bow	<20μm
Warp	<20μm
Surface Finish	SSP, DSP, lapped, etched or as-cut
Edge	Notch or flat, SEMI standard
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	8” (200 mm) Silicon Substrate
Crystal Growth	CZ / FZ
Crystal Orientation	(100), (110), (111)
Doping Type	N-type (P, As, Sb), P-type (B)
Grade	Prime, test, dummy, research grade
Resistivity	0.0005–10,000+ Ω·cm (depending on growth method and doping)
Thickness	725 ± 25 μm
TTV	<5 μm
Bow	<30 μm
Warp	<30 μm
Surface Finish	SSP, DSP, lapped, etched or as-cut
Edge	Notch, SEMI standard
Packaging	Single or multi‑wafer cassette, vacuum sealed

Parameter	12” (300 mm) Silicon Substrate
Crystal Growth	CZ
Crystal Orientation	(100), (110), (111)
Doping Type	N-type (P, As, Sb), P-type (B)
Grade	Prime, test, dummy
Resistivity	Customized according to doping requirements
Standard Thickness	775 ± 25 μm
TTV	<10 μm
Bow	<50 μm
Warp	<50 μm
Surface Finish	SSP, DSP, lapped or etched
Edge Treatment	Notch, SEMI standard
Packaging	Single or multi‑wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Power Electronics & Epitaxy

Heavily doped silicon is primarily used for power devices, MOSFETs, IGBTs, power diodes, and epitaxial substrates. It features a typical resistivity range of 0.0005 – 0.005 Ω·cm.

Logic ICs, CMOS & MEMS

Low to medium resistivity silicon substrate is widely used in logic ICs, CMOS, MEMS, and various sensors. It supports semiconductor R&D with a typical resistivity range of 0.005 – 100 Ω·cm.

RF & High-Frequency Devices

High-resistivity silicon enables RF devices, high-frequency circuits, and advanced sensors. It is also widely used in research applications with a typical resistivity ranging from 100 to 10,000 Ω·cm.

Microwave & Specialized Research

Ultra-high-resistivity silicon is ideal for RF, microwave, and detector applications, as well as specialized research. It offers a typical resistivity of greater than 10,000 Ω·cm.

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

What resistivity range is available?

Our silicon wafer portfolio covers a wide resistivity range from 0.0005 Ω·cm to >10,000 Ω·cm, depending on crystal growth method (CZ or FZ) and doping requirements (N-type or P-type).

Do you provide prime and test-grade silicon wafers?

Yes. We supply Prime, Test, Dummy, and Research-grade wafers to meet the specific quality and application requirements of your device fabrication or R&D projects.

Can silicon wafer specifications be customized?

Absolutely. We support customization for diameter, orientation, thickness, surface finish (SSP/DSP) to match your exact process requirements.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.