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MOS & Gate Dielectrics
Thin dry thermal SiO₂ layers can be used as gate dielectric or insulating layers in MOS-based device structures. MOSFETs MOS capacitors Analog devices Sensor devices Semiconductor R&D
Silicon Dioxide Wafer
Silicon Dioxide Wafer
Power Wafertech Group supplies silicon dioxide wafers (SiO₂ on Si) manufactured by controlled thermal oxidation of silicon substrates. Both dry thermal oxidation and wet thermal oxidation are available for different oxide thickness and process requirements. Our SiO₂ wafers feature controlled oxide thickness, good wafer-level uniformity and epi-/process-ready surfaces.
- Size — 6”, 8”, 12”
- Type — Dry oxidation, wet oxidation
- Dry oxide thickness — typically 15–300 nm
- Wet oxide thickness — typically 500 nm–2 μm
- Oxidized surface — Single-side or double-side oxidation
- Packaging — Single or multi‑wafer cassette, vacuum sealed
Detailed Specifications
Published specifications by wafer diameter.
Select a diameter to review the corresponding published specification set.
Applications
Where this wafer delivers value
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Electrical Isolation
Thicker SiO₂ layers provide electrical insulation between device structures and can be used for isolation processes. Power ICs High-voltage devices RF devices Device isolation structures
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MEMS & Sensors
Thermal oxide layers can function as insulation, masking or sacrificial layers in MEMS fabrication. MEMS sensors Pressure sensors Microstructures Silicon micromachining
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Diffusion & Process Masking
SiO₂ provides a useful masking layer for selected semiconductor processing steps. Dopant diffusion Ion implantation processes Etching processes Device fabrication
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Passivation & Surface Protection
Thermal oxide can also be used as a protective and insulating layer in silicon-based device structures.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
A silicon oxide wafer is a silicon substrate with a controlled SiO₂ layer thermally grown on its surface. It is widely used for insulation, passivation, masking and semiconductor device fabrication.
Dry oxidation produces a dense, high-quality oxide and is generally preferred for thin oxide layers. Wet oxidation has a higher growth rate and is typically used for thicker SiO₂ layers.
Yes. We support research, prototype and small-batch orders, as well as production requirements.
Please provide the wafer size, orientation, doping type, resistivity, SiO₂ thickness, oxidation method, oxidation side and quantity.
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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