Silicon Epitaxial Wafer

Silicon Epitaxial Wafer

High-quality Si epi wafers grown by CVD, featuring precise thickness, doping profile, and resistivity control. Engineered with low defect density and excellent thickness uniformity for advanced CMOS, discrete power devices, and sensor fabrication.

Size — 4", 6", 8", 12"
Method — CVD (Chemical Vapor Deposition)
Epi structure — N/N+, P/P+, P/N (Customizable)
Epi thickness — 0.5–150 μm
Epi resistivity — 0.1–1000 Ω·cm
Substrate — N⁺, P⁺ and high-resistivity Si
Packaging — Single or multi-wafer cassette, vacuum sealed

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Detailed Specifications

Specifications by wafer type.

Select a wafer type to view detailed specs

Parameter	Specification
Wafer Diameter	4", 6", 8", 12"
Growth Method	CVD
Substrate Type	N⁺ (Sb/As), P⁺ (B), High-Resistivity Si
Crystal Orientation	(100), (111)
Epi Doping Type	N-type (P), P-type (B)
Epi Structure	N/N⁺, P/P⁺, P/N, multilayer / customized
Epi Resistivity	0.1–1000 Ω·cm
Epi Thickness	0.5–150 μm
Doping Profile	Customized
Packaging	Single wafer cassette, vacuum sealed

Applications

Where this wafer delivers value

Power Devices

Precise control of epi thickness and resistivity is critical for high-voltage power devices. It is widely used for Power MOSFETs, IGBTs, Schottky and JBS diodes, enabling high-efficiency power modules, industrial motor drives, and automotive electronics.

RF & High-Speed Devices

High-resistivity silicon substrates and controlled epi layers minimize unwanted parasitic effects for high-frequency applications. This makes it ideal for RF switches, LNAs, and VCOs in 5G/6G infrastructure, microwave communications, and high-frequency analog circuits.

Bipolar Devices

Customized P/N, N/P/N, or P/N/P epi structures optimize breakdown characteristics and high-frequency performance. Typical applications include BJTs and high-speed analog ICs for power management and precision analog applications.

CMOS Image Sensors

P-type epitaxial silicon on heavily doped substrates controls substrate-related electrical effects. This enables low dark current, reduced crosstalk, and improved image uniformity for smartphone cameras and automotive CMOS image sensors (CIS).

FAQ

Common questions about this product

Quick answers on material selection, customization, testing and ordering.

Can you customize the doping profile?

Yes. We offer fully customizable epi structures, including thickness, resistivity, doping type (N/P), doping concentration, and multilayer structures (N/N+, P/P+, P/N). Our engineering team tailors the epitaxial profile to match your specific device design.

Do you support small-batch R&D orders?

Absolutely. We are R&D friendly for prototyping. We support flexible small-batch requirements and seamlessly scale up to high-volume production.

What information is required for a quotation?

To provide an accurate quote, please specify: Wafer size, crystal orientation, substrate type (N+, P+, or High-Resistivity), epi thickness, target resistivity, epi doping, structure (e.g., P/N), and order quantity.

What metrology and quality control do you provide?

We conduct comprehensive material characterization as requested. Every batch includes a CoA with full data to ensure complete traceability.

Technical Inquiry

Speak to Engineers About Your Wafer Needs

Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.