01
Deep-UV Optoelectronics
AlN-on-sapphire provides an ideal high-transparency template for AlGaN-based UVC LEDs and solar-blind UV photodetectors, widely used in water purification, sterilization, and UV sensing.
AlN Template
AlN on Sapphire Template
AlN on Sapphire templates feature high-crystalline-quality AlN films with low defect density, excellent thermal stability, and strong piezoelectric properties. They are ideal for deep-UV LEDs, power/RF devices, SAW filters, and integrated photonics.
- Substrate — C-plane Sapphire (other orientations available)
- Size — 2", 4”, 6", customizable
- Epi Thickness — 0.5~5μm
- Surface finished — epi-ready
- XRD FWHM (0002) — typical <500 arcsec
- Custom specification — acceptable
- Package — Single wafer cassette, vacuum sealed
Detailed Specifications
Specifications by wafer type.
Select a wafer type to view detailed specs
* Typical values; actual specifications depend on wafer size, growth conditions and product requirements.
Applications
Where this wafer delivers value
02
Power & RF Electronics
The insulating sapphire substrate and high-resistivity AlN buffer minimize parasitic capacitance, making it ideal for high-frequency GaN-on-Sapphire RF HEMTs and high-power switching devices.
03
Acoustic & MEMS Devices
Harnessing the strong piezoelectric properties of AlN for fabricating SAW/BAW RF filters, PMUTs, and highly sensitive piezoelectric MEMS sensors on scalable sapphire platforms.
04
Integrated Photonics & Nonlinear Optics
AlN's wide optical transparency window (UV to IR) and strong nonlinear optical coefficients enable advanced photonic integrated circuits (PICs), microresonators, and quantum photonic devices.
FAQ
Common questions about this product
Quick answers on material selection, customization, testing and ordering.
Typical AlN film thickness ranges from 0.5 µm to 5 µm. The thickness can be fully customized to perfectly match your specific epitaxial structure, whether for DUV LEDs, RF HEMTs, or MEMS devices.
Absolutely. AlN on Sapphire template features an Epi-ready surface with excellent smoothness (Ra < 2 nm) and high crystal quality (XRD FWHM < 500 arcsec), ensuring a stable foundation for subsequent AlGaN, GaN, or related epitaxial growth.
Yes. While our templates are an ideal starting platform for AlGaN-based UVC LEDs and detectors, they are equally suited for GaN-on-Sapphire RF devices, SAW/BAW filters, and integrated photonics.
Yes. Small quantities and customized specifications can be discussed for research and prototype development.
Technical Inquiry
Speak to Engineers About Your Wafer Needs
Share your material, dimensions, specifications, application or project stage. Our team will review your requirements and respond within one business day.
Engineering-led response
Inquiries are routed to the appropriate technical or commercial team.
Address
No. 1389, Lianmei Road, Lianhua Industrial Zone, Tong’an, Xiamen, Fujian 361100, China
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