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GaN Photodetector Wafer

GaN Photodetector Wafer

Offer various commercial epitaxy GaN photodetector wafers with customizable structures, covering different substrates and application requirements

InAlNGaN HEMT Epitaxy

InAlNGaN HEMT Epitaxy

Custom InAlN/GaN HEMT epiwafers on sapphire, SiC, and Si substrate, with high-density 2DEG, ideal for Millimeter-Wave Applications

Violet Laser Diode

Violet Laser Diode

High-performance GaN based violet laser diode epiwafers supplied are grown Si substrate by MOCVD method with multi quantum wells for low threshold current.

4H-SiC PIN Epiwafers

4H-SiC PIN Epiwafers

Discover PWG's 4H-SiC PIN diode epiwafers with optimized epilayer design, ensuring high reliability for power electronics

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